硒化锗晶体 GeSe (Germanium Selenide)
晶体尺寸：~10毫米
电学性能：半导体
晶体结构：斜方晶系
晶胞参数： a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90 °
晶体类型：合成
晶体纯度： ＞99.995%

X-ray diffraction a kan GeSe single crystal daidaitawa a kan jirgin sama (100). An yi XRD a zafin jiki na ɗaki ta amfani da D8 Venture Bruker. Ƙananan XRD 4 sun dace, daga hagu zuwa dama, zuwa (h00) tare da h = 2, 4, 6, 8

Fuda X-ray diffraction (XRD) na dutse guda ɗaya GeSe. An yi diffraction na X-ray a zafin jiki na ɗaki ta amfani da D8 Venture Bruker.

Binciken stoichiometric na dutse guda ɗaya GeSe ta hanyar spectroscopy na X-ray mai watsawa (EDX).

Raman spectrum na dutse guda ɗaya GeSe. An yi aunawa tare da tsarin Raman na 785 nm a zafin jiki na ɗaki.